Structure and strain measurements on SiC formed by carbon ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 125-128

  Preckwinkel, U ^a   Lindner, J K N ^a   Stritzker, B ^a   Rauschenbach, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTOR DOPING; STRESS RELAXATION; X RAY DIFFRACTION ANALYSIS;

WIDE BAND GAP SEMICONDUCTORS;

SILICON CARBIDE;

EID: 0030566538     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00493-4     Document Type: Article

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