Challenges and performance limitations of high-k and oxynitride gate dielectrics for 90/65 nm CMOS technology

Microelectronics Journal

Volumn 38, Issue 6-7, 2007, Pages 783-786

  Tan, S Y ^a  

^a CHINESE CULTURE UNIVERSITY   (Taiwan)

Author keywords

Gate dielectric materials; HfO2; HfSiON; High k; Mobility; Reliability; SiON

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; FERMI LEVEL; LEAKAGE CURRENTS; PERMITTIVITY; ULTRATHIN FILMS;

GATE DIELECTRIC MATERIALS; GATE ELECTRODES; OXYNITRIDE; ULTRATHIN OXIDE FILMS;

GATE DIELECTRICS;

EID: 34547398586     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.04.012     Document Type: Article

References (9)

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