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Volumn 483-485, Issue , 2005, Pages 405-408
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Characterization of 4H-SiC epitaxial layers by microwave photoconductivity decay
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Author keywords
Carrier lifetime; Epitaxial growth; Non contacting characterization; Silicon carbide
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Indexed keywords
EPITAXIAL GROWTH;
EPITAXIAL LAYERS;
MICROWAVES;
PHOTOCONDUCTIVITY;
DEVICE SIMULATIONS;
MICROWAVE PHOTOCONDUCTIVITY DECAY (M-PCD);
PIN DIODES;
SILICON CARBIDE;
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EID: 33750364033
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-963-6.405 Document Type: Conference Paper |
Times cited : (8)
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References (8)
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