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Volumn 483-485, Issue , 2005, Pages 405-408

Characterization of 4H-SiC epitaxial layers by microwave photoconductivity decay

Author keywords

Carrier lifetime; Epitaxial growth; Non contacting characterization; Silicon carbide

Indexed keywords

EPITAXIAL GROWTH; EPITAXIAL LAYERS; MICROWAVES; PHOTOCONDUCTIVITY;

EID: 33750364033     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.405     Document Type: Conference Paper
Times cited : (8)

References (8)
  • 1
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    • Special Issue on Wide Bandgap Devices
    • J. C Zolper and B. V. Shanabrook ed, June
    • J. C Zolper and B. V. Shanabrook (ed.), Special Issue on Wide Bandgap Devices, Proceedings of IEEE, Vol. 90, Issue 6 (June 2002).
    • (2002) Proceedings of IEEE , vol.90 , Issue.6
  • 2
    • 85086679274 scopus 로고    scopus 로고
    • R. Madar and J. Camassel ed, Materials Science Forum
    • th ICSCRM 2003, Materials Science Forum, Vol. 457-459 (2003).
    • (2003) th ICSCRM , vol.457-459
  • 3
    • 0023289748 scopus 로고
    • Non- Destructive Lifetime Measurements in Silicon Wafers by Microwave Reflection
    • J. M. Borrego, R. J. Gutmann, N. Jensen, and O. Paz, "Non- Destructive Lifetime Measurements in Silicon Wafers by Microwave Reflection", Solid State Electronics, Volume 30 (1987), p. 195.
    • (1987) Solid State Electronics , vol.30 , pp. 195
    • Borrego, J.M.1    Gutmann, R.J.2    Jensen, N.3    Paz, O.4
  • 7
    • 0034870274 scopus 로고    scopus 로고
    • A New Sublimation Etching for Reproducible Growth of Epitaxial Layers of SiC on SiC Substrate in a CVD Reactor
    • R. Wang, I. Bhat and P. Chow, "A New Sublimation Etching for Reproducible Growth of Epitaxial Layers of SiC on SiC Substrate in a CVD Reactor", Mat. Res. Soc. Symp. Proc, 640, H2.6.1,(2001).
    • (2001) Mat. Res. Soc. Symp. Proc , vol.640
    • Wang, R.1    Bhat, I.2    Chow, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.