First-principles study of the effects of oxygen vacancy on hole tunneling current

Microelectronics Reliability

Volumn 47, Issue 8, 2007, Pages 1213-1217

  Mao, L F ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; ELECTRONIC STRUCTURE; ENERGY GAP; HOLE TRAPS; OXYGEN VACANCIES; VALENCE BANDS;

DEFECT ASSISTED HOLE; HOLE TUNNELING CURRENT; OXIDE THICKNESS; QUARTZ SUPERCELL;

SILICA;

EID: 34547182530     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.09.027     Document Type: Article

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