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Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks

(4) Coleman, P G a Burrows, C P a Mahapatra, R b Wright, N G b

a University of Bath (United Kingdom)

b NEWCASTLE UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; EPILAYERS; GRAIN BOUNDARIES; GROWTH TEMPERATURE; IMPURITIES; POINT DEFECTS; POLYCRYSTALLINE MATERIALS; POSITRON ANNIHILATION SPECTROSCOPY; SILICA; SILICON CARBIDE; THICK FILMS;

BOUNDARY FORMATION; DIELECTRIC STACKS; VACANCY CONCENTRATION;

TITANIUM DIOXIDE;

EID: 34547165484 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2752129 Document Type: Article

Times cited : (6)

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