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Volumn 26, Issue 10, 2001, Pages 777-789

Atomic-level control during film growth under highly kinetically constrained conditions: H mediation and ultrahigh doping during Si1-xGex gas-source epitaxy

(1) Greene, J E a

a NONE

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EID: 0001083425 PISSN: 08837694 EISSN: None Source Type: Journal
DOI: 10.1557/mrs2001.205 Document Type: Article

Times cited : (16)

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