Comparison between quantum confinement effects of quantum wires and dots

Chemistry of Materials

Volumn 16, Issue 21, 2004, Pages 4012-4015

  Li, Jingbo ^a   Wang, Lin Wang ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; ONE DIMENSIONAL; POLARIZATION; SEMICONDUCTOR QUANTUM DOTS; SURFACE CHEMISTRY; THERMAL EFFECTS;

BAND-GAP ENERGIES; NANOCRYSTALS;

SEMICONDUCTOR QUANTUM WIRES;

CADMIUM; GALLIUM ARSENIDE; INDIUM; SELENIUM; SILICON; TELLURIUM; ZINC;

AB INITIO CALCULATION; ARTICLE; CALCULATION; CRYSTAL STRUCTURE; ELECTRON; ENERGY; NANOCRYSTAL; NANOPARTICLE; PHOTOLUMINESCENCE; QUANTUM DOT; QUANTUM MECHANICS; QUANTUM WIRE; SEMICONDUCTOR; TEMPERATURE;

EID: 6044278146     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm0494958     Document Type: Article

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