The work function improvement on indium - Tin - Oxide epitaxial layers by doping treatment for organic light-emitting device applications

Journal of Physical Chemistry C

Volumn 111, Issue 23, 2007, Pages 8372-8376

  Ho, Jyh Jier ^a   Chen, Chin Ying ^b   Hsiao, Robert Y ^c   Ho, Olivia L ^d  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b FORTUNE INSTITUTE OF TECHNOLOGY   (Taiwan)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d ABBOTT LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVING VOLTAGE; ORGANIC LIGHT EMITTING DEVICE; TURN ON VOLTAGE;

DEPOSITION; DOPING (ADDITIVES); ELECTROLUMINESCENCE; INDIUM COMPOUNDS; OPTICAL DEVICES; WORK FUNCTION;

EPITAXIAL FILMS;

EID: 34347341603     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp0703408     Document Type: Article

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