Statistical and voltage scaling properties of post-breakdown for ultra-thin-oxide PFETs in inversion mode

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 54-62

  Wu, Ernest ^a   Suñé, Jordi ^b  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ULTRA-THIN-GATE-OXIDE; VOLTAGE ACCELERATION;

ELECTRIC BREAKDOWN; OXIDE FILMS; STATISTICAL METHODS; ULTRATHIN FILMS; VOLTAGE CONTROL;

FIELD EFFECT TRANSISTORS;

EID: 34250772896     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251191     Document Type: Conference Paper

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