Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 1999, Pages 81-84

  Guan, Hao ^a   Cho, Byung Jin ^a   Li, M F ^a   He, Y D ^a   Xu, Zhen ^a   Dong, Zhong ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; OXIDES; SEMICONDUCTOR DEVICE TESTING; ULTRATHIN FILMS;

QUASI-BREAKDOWN (QB) MECHANISM;

GATES (TRANSISTOR);

EID: 0033283913     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)