-
1
-
-
0001791729
-
Can NROM, a 2-bit trapping storage cell, give a real challenge to floating-gate cells?
-
Tokyo, Japan, Sept
-
B. Eitan, P. Pavan, I. Bloom, E. Aloni, A.Frommer, and D. Finzi, "Can NROM, a 2-bit trapping storage cell, give a real challenge to floating-gate cells?," in Proc. SSDM, Tokyo, Japan, Sept. 1999, pp. 522-524.
-
(1999)
Proc. SSDM
, pp. 522-524
-
-
Eitan, B.1
Pavan, P.2
Bloom, I.3
Aloni, E.4
Frommer, A.5
Finzi, D.6
-
2
-
-
0034315780
-
NROM: A novel localized trapping, 2-bit nonvolatile memory cell
-
Nov
-
B. Eitan, P. Pavan, I. Bloom, E. Aloni, A.Frommer, and D. Finzi, "NROM: A novel localized trapping, 2-bit nonvolatile memory cell," IEEE Electron Device Lett., vol.21, pp. 543-545, Nov. 2000.
-
(2000)
IEEE Electron Device Lett
, vol.21
, pp. 543-545
-
-
Eitan, B.1
Pavan, P.2
Bloom, I.3
Aloni, E.4
Frommer, A.5
Finzi, D.6
-
3
-
-
5444262659
-
On the physical mechanism of the NROM memory erase
-
Oct
-
L. Larcher, P. Pavan, and B. Eitan, "On the physical mechanism of the NROM memory erase," IEEE Trans. Electron Devices, vol.51, pp. 1593-1599, Oct. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, pp. 1593-1599
-
-
Larcher, L.1
Pavan, P.2
Eitan, B.3
-
4
-
-
11144234851
-
The two-bit NROM reliability
-
Sept
-
A. Shappir, E. Lusky, G. Choen, I. Bloom, M. Janai, and B. Eitan, "The two-bit NROM reliability," IEEE Trans. Device Mater. Rel., vol.4, pp. 397-403, Sept. 2004.
-
(2004)
IEEE Trans. Device Mater. Rel
, vol.4
, pp. 397-403
-
-
Shappir, A.1
Lusky, E.2
Choen, G.3
Bloom, I.4
Janai, M.5
Eitan, B.6
-
5
-
-
84955259397
-
Data retention, endurance and acceleration factors of NROM devices
-
April
-
M. Janai, "Data retention, endurance and acceleration factors of NROM devices," in Proc. of the IEEE International Reliability Physics Symposium, 41, April 2003, pp. 502-505.
-
(2003)
Proc. of the IEEE International Reliability Physics Symposium
, vol.41
, pp. 502-505
-
-
Janai, M.1
-
6
-
-
11144229439
-
Data retention reliability model of NROM nonvolatile memory products
-
Sept
-
M.Janai, B. Eitan, A. Shappir, e. Lusky, I. Bloom, and G. Choen, "Data retention reliability model of NROM nonvolatile memory products," IEEE Trans. Device Mater. Rel., vol.4, pp. 404-415, Sept. 2004.
-
(2004)
IEEE Trans. Device Mater. Rel
, vol.4
, pp. 404-415
-
-
Janai, M.1
Eitan, B.2
Shappir, A.3
Lusky, E.4
Bloom, I.5
Choen, G.6
-
7
-
-
0036714562
-
Electrons retention model for localized charge in Oxide-Nitride-Oxide (ONO) dielectric
-
Sept
-
E. Lusky, Y. Shacham-Diamand, I. Bloom, and B. Eitan, "Electrons retention model for localized charge in Oxide-Nitride-Oxide (ONO) dielectric," IEEE Electron Device Lett., vol.23, pp. 556-558, Sept. 2002.
-
(2002)
IEEE Electron Device Lett
, vol.23
, pp. 556-558
-
-
Lusky, E.1
Shacham-Diamand, Y.2
Bloom, I.3
Eitan, B.4
-
8
-
-
0035506164
-
Characterization of channel hot electron injection by the subthreshold slope of NROM™ device
-
Nov
-
E. Lusky, Y. Shacham-Diamand, I. Bloom, and B. Eitan, "Characterization of channel hot electron injection by the subthreshold slope of NROM™ device," IEEE Electron Device Lett., vol.22, pp. 556-558, Nov. 2001.
-
(2001)
IEEE Electron Device Lett
, vol.22
, pp. 556-558
-
-
Lusky, E.1
Shacham-Diamand, Y.2
Bloom, I.3
Eitan, B.4
-
9
-
-
0036867142
-
Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells
-
Nov
-
L. Larcher, G. Verzellesi, P. Pavan, E. Lusky, I. Bloom, and B. Eitan, "Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells," IEEE Trans. Electron Devices, vol. 49, pp. 1939-1946, Nov. 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 1939-1946
-
-
Larcher, L.1
Verzellesi, G.2
Pavan, P.3
Lusky, E.4
Bloom, I.5
Eitan, B.6
-
10
-
-
0027239315
-
Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFET's
-
Jan
-
T. A. Fjeldly and M. Shur, "Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFET's," IEEE Trans. Electron Devices, vol. 40, pp. 137-145, Jan. 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 137-145
-
-
Fjeldly, T.A.1
Shur, M.2
-
11
-
-
3343017574
-
Temperature Effect on Read Current in a Two-Bit Nitride-Based Trapping Storage Flash EEPROM Cell
-
July
-
M.-Y. Liu, et al., "Temperature Effect on Read Current in a Two-Bit Nitride-Based Trapping Storage Flash EEPROM Cell," IEEE Electron Device Lett., vol.25, pp.495-497, July 2004.
-
(2004)
IEEE Electron Device Lett
, vol.25
, pp. 495-497
-
-
Liu, M.-Y.1
-
13
-
-
0036638639
-
CHISEL Flash EEPROM-Part I: Performance and Scaling
-
Jul
-
S. Mahapatra, S. Shukuri, and Jeff Bude, "CHISEL Flash EEPROM-Part I: Performance and Scaling," IEEE Trans. Electron Devices, vol.49, pp. 1296-1301, Jul. 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 1296-1301
-
-
Mahapatra, S.1
Shukuri, S.2
Bude, J.3
-
14
-
-
0026821569
-
Modeling of nMOS Transistors for simulating of hot-carrier-induced device and circuit degradation
-
Feb
-
Y. Leblibici and S.-M- Kang, "Modeling of nMOS Transistors for simulating of hot-carrier-induced device and circuit degradation," IEEE Trans. On Computer-Aided Design, vol.11, pp. 235-246, Feb. 1992.
-
(1992)
IEEE Trans. On Computer-Aided Design
, vol.11
, pp. 235-246
-
-
Leblibici, Y.1
Kang, S.-M.2
-
15
-
-
0024105667
-
A physically based mobility model for numerical simulation of nonplanar devices
-
Nov
-
C. Lombardi, S. Manzini, A. Saporito, and M. Vanzini, "A physically based mobility model for numerical simulation of nonplanar devices," IEEE Trans. On Computer-Aided Design, vol.7, pp. 1164-1171, Nov. 1988.
-
(1988)
IEEE Trans. On Computer-Aided Design
, vol.7
, pp. 1164-1171
-
-
Lombardi, C.1
Manzini, S.2
Saporito, A.3
Vanzini, M.4
-
16
-
-
21644469184
-
Effects of CHE and CHISEL programming operation on the characteristics of SONOS memory
-
L. Sun et al., "Effects of CHE and CHISEL programming operation on the characteristics of SONOS memory," in Proc. ICSICT, 2004.
-
(2004)
Proc. ICSICT
-
-
Sun, L.1
-
17
-
-
0027206273
-
Rigorous theory and simplified model of the band-to-band tunneling in silicon
-
A. Schenk, "Rigorous theory and simplified model of the band-to-band tunneling in silicon," Solid State Electron., vol. 36, no. 1, pp. 19-34, 1993.
-
(1993)
Solid State Electron
, vol.36
, Issue.1
, pp. 19-34
-
-
Schenk, A.1
-
18
-
-
2942657319
-
Spatial characterization of localized charge trapping and charge redistribution in the NROM device
-
A. Shappir et al., "Spatial characterization of localized charge trapping and charge redistribution in the NROM device," Solid State Electron., vol. 48, 2004, pp. 1489-1495.
-
(2004)
Solid State Electron
, vol.48
, pp. 1489-1495
-
-
Shappir, A.1
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