Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates

Materials Letters

Volumn 61, Issue 19-20, 2007, Pages 4103-4106

  Ai, Yujie ^a   Xue, Chengshan ^a   Sun, Chuanwei ^b   Sun, Lili ^a   Zhuang, Huizhao ^a   Wang, Fuxue ^a   Yang, Zhaozhu ^a   Qin, Lixia ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

^b UNIVERSITY OF JINAN   (China)

Author keywords

Crystal growth; Crystal structure; Epitaxial growth; GaN

Indexed keywords

AMMONIA; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES;

AMMONIA ATMOSPHERE; AMMONIATING; DIAMETERS;

THIN FILMS;

EID: 34250736707     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2007.01.027     Document Type: Article

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