Substitutional carbon in Si1-yCy alloys as measured with infrared absorption and Raman spectroscopy

Journal of Applied Physics

Volumn 82, Issue 9, 1997, Pages 4246-4252

  Melendez Lira M ^a,e   Menendez J ^a   Kramer, K M ^b   Thompson, M O ^b   Cave, N ^c   Liu, R ^c   Christiansen, J W ^c   Theodore, N D ^c   Candelaria, J J ^d  

^a ARIZONA STATE UNIVERSITY   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

^c MOTOROLA INC   (United States)

^d MOTOROLA INC   (United States)

^e DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; INFRARED SPECTROSCOPY; ION IMPLANTATION; LASER BEAM EFFECTS; LIGHT ABSORPTION; NUMERICAL METHODS; RAMAN SPECTROSCOPY; RECRYSTALLIZATION (METALLURGY); SECONDARY ION MASS SPECTROMETRY; SUBSTITUTION REACTIONS;

CHARGED PARTICLE ACTIVATION ANALYSIS; INFRARED ABSORPTION; INTEGRATED INFRARED ABSORBANCES; LASER RECRYSTALLIZATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031274480     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366231     Document Type: Article

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