Order-of-magnitude improvement in microwave power capacity of InGaP/GaAs HBT under isothermal pulsed operation

IEEE Transactions on Electron Devices

Volumn 53, Issue 10, 2006, Pages 2634-2639

  Halder, Subrata ^a   Hwang, James C M ^a   Solomon, George A ^b,c   Klein, Gerald ^b  

^a LEHIGH UNIVERSITY   (United States)

^b Herley Industries Inc   (United States)

^c Communication and Power Industries ^*  (United States)

Author keywords

Harmonic; Heterojunction bipolar transistor (HBT); Load pull measurement; Microwave power; Pulsed measurement; Pulsed operation; RF power; Waveform

Indexed keywords

HARMONIC; HETEROJUNCTION BIPOLAR TRANSISTOR (HBT); LOAD-PULL MEASUREMENT; MICROWAVE POWER; PULSED MEASUREMENT; PULSED OPERATION; RF POWER; WAVEFORM;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; IONIZATION OF GASES; MICROWAVE GENERATION; MICROWAVE POWER TRANSMISSION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34250700840     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.882045     Document Type: Article

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