Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 12, 2002, Pages 2811-2819

  Heckmann, Sylvain ^a   Sommet, Raphaël ^a   Nébus, Jean Michel ^a   Jacquet, Jean Claude ^b   Floriot, Didier ^b   Auxemery, Philippe ^c   Quéré, Raymond ^a  

^a UNIVERSITY OF LIMOGES   (France)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c United Monolithic Semiconductors GmbH   (Germany)

Author keywords

Breakdown modeling; Heterojunction bipolar transistors (HBTs); Pulsed measurement; Thermal characterization

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; MICROWAVE CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

PULSED MEASUREMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036904665     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.805191     Document Type: Conference Paper

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