Implementation of nonquasi-static effects in compact bipolar transistor models

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 12, 2003, Pages 2531-2537

  Cherepko, Sergey V ^a   Hwang, James C M ^a  

^a Lehigh University   (United States)

Author keywords

Bipolar transistors; Charge carrier processes; HBTs; Nonlinear circuits; Semiconductor device modeling

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; ELECTROSTATICS; EQUIVALENT CIRCUITS; NONLINEAR NETWORKS; SEMICONDUCTOR DEVICE MODELS;

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL; NONQUASI STATIC EFFECTS; TWO DIMENSIONAL PHYSICAL MODEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0742269422     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.819780     Document Type: Article

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