Structural characterization of SiGe/Si dry thermal oxidation

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Volumn 4, Issue , 2004, Pages 267-269

  Chen, Z J ^a   Zhang, F ^a,b   Wang, X ^a,b   Zou, S C ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b Shanghai Simgui Technology Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; OXIDATION; SCANNING ELECTRON MICROSCOPY; THERMODYNAMICS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

DRY THERMAL OXIDATION; THERMAL OXIDES; THREADING DISLOCATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 3543110359     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Conference Paper

References (5)

1. U. Konig and J. Hersener, Solid State Phenom. 47/48, (1996) 17
2. D. K. Nayak, K. Kamjoo, et. al., Appl. Phys. Lett.56, (1990) 66
3. S.J. Kilpatrick, R.J. Jaccodine and P.E. Thomoson, J.Appl. Phys. 81, 8018(1997)
4. Y.S.Lim, J.S. Jeong, et. al., Appl. Phys. Lett. 79, (2002) 3606
5. S. Fukatsu, Y. Ishikawa, et. al., Appl. Phys. Lett. 71(1998) 258