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Volumn , Issue , 2006, Pages 1813-1816

A 2 GHz oscillator based on a solidly mounted thin film bulk acoustic wave resonator

Author keywords

Acoustic resonator; Bipolar transistor oscillator; Thin film devices

Indexed keywords

ALUMINA; BIPOLAR TRANSISTORS; CAPACITORS; MICROWAVE OSCILLATORS; NATURAL FREQUENCIES; THIN FILM TRANSISTORS;

EID: 34250344900     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249747     Document Type: Conference Paper
Times cited : (5)

References (19)
  • 1
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    • Lakin, K.M.1
  • 5
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    • A film bulk acoustic resonator (FBAR) L band low noise oscillator for digital communications
    • A. Khanna, E. Gane, T. Chong, H. Ko, P. D. Bradley, R. Ruby, and J. D. Larson III, "A film bulk acoustic resonator (FBAR) L band low noise oscillator for digital communications," in Proc. EuMC, 2000, pp. 1025-1028.
    • (2000) Proc. EuMC , pp. 1025-1028
    • Khanna, A.1    Gane, E.2    Chong, T.3    Ko, H.4    Bradley, P.D.5    Ruby, R.6    Larson III, J.D.7
  • 6
    • 0038155511 scopus 로고    scopus 로고
    • A 300-μW 1.9-GHz CMOS oscillator utilizing micromachined resonators
    • B. P. Otis and J. M. Rabaey, "A 300-μW 1.9-GHz CMOS oscillator utilizing micromachined resonators," IEEE J. Solid-State Circuits, vol. 38, pp. 1271-1274, 2003.
    • (2003) IEEE J. Solid-State Circuits , vol.38 , pp. 1271-1274
    • Otis, B.P.1    Rabaey, J.M.2
  • 10
    • 34250327802 scopus 로고    scopus 로고
    • Characterization of ZnO-based FBAR devices for RF applications
    • G. Yoon, J.-D. Park, and H.-D. Park, "Characterization of ZnO-based FBAR devices for RF applications," in Proc. ICMMT, 2000, pp. 192-5.
    • (2000) Proc. ICMMT , pp. 192-195
    • Yoon, G.1    Park, J.-D.2    Park, H.-D.3
  • 11
    • 0036440069 scopus 로고    scopus 로고
    • Air-backed Al/ZnO/Al film bulk acoustic resonator without any support layer
    • H. Zhang and E, S. Kim, "Air-backed Al/ZnO/Al film bulk acoustic resonator without any support layer," in Proc. IEEE Int. Freq. Contrl. Symp., 2002, pp. 20-26.
    • (2002) Proc. IEEE Int. Freq. Contrl. Symp , pp. 20-26
    • Zhang, H.1    Kim, E.S.2
  • 12
  • 16
    • 0242696145 scopus 로고    scopus 로고
    • High performance RF-filters suitable for above IC integration; Film bulk-acoustic-resonators (FBAR) on silicon
    • R. Aigner, "High performance RF-filters suitable for above IC integration; Film bulk-acoustic-resonators (FBAR) on silicon." in Proc. IEEE Custom Integrated Circuits Conf., 2003, pp. 141-146.
    • (2003) Proc. IEEE Custom Integrated Circuits Conf , pp. 141-146
    • Aigner, R.1
  • 18
    • 0036602357 scopus 로고    scopus 로고
    • Reactive sputter deposition of highly oriented AIN films at room temperature
    • G. Iriarte, F. Engelmark, and I. Katardjiev, "Reactive sputter deposition of highly oriented AIN films at room temperature," J. Mater. Res., vol. 17, pp. 1469-1475, 2002.
    • (2002) J. Mater. Res , vol.17 , pp. 1469-1475
    • Iriarte, G.1    Engelmark, F.2    Katardjiev, I.3
  • 19
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    • Modified Butterworth-Van Dyke circuit for FBAR resonators and automated measurement system
    • J. D. Larson III, P. D. Bradley, S. Wartenberg, and R. C. Ruby, "Modified Butterworth-Van Dyke circuit for FBAR resonators and automated measurement system," in Proc. IEEE Ultrason. Symp., 2000, pp. 863-868.
    • (2000) Proc. IEEE Ultrason. Symp , pp. 863-868
    • Larson III, J.D.1    Bradley, P.D.2    Wartenberg, S.3    Ruby, R.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.