CdSe quantum dot formation: Alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions

Nanotechnology

Volumn 18, Issue 26, 2007, Pages

  Robin, I C ^a   Aichele, T ^a   Bougerol, C ^a   Andre R ^a   Tatarenko, S ^a   Bellet Amalric, E ^b   Van Daele, B ^c   Van Tendeloo, G ^d  

^a LIPHY   (France)

^b CEA GRENOBLE   (France)

^c IMEC   (Belgium)

^d UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GROWTH RATE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTOR QUANTUM DOTS; STRAIN; SURFACE MORPHOLOGY; TWO DIMENSIONAL;

AMORPHOUS SELENIUM; QUANTUM DOT MORPHOLOGY; TEMPERATURE RANGE;

SEMICONDUCTING CADMIUM COMPOUNDS;

CADMIUM; QUANTUM DOT; SELENIUM;

ARTICLE; COATED PARTICLE; ELECTRON DIFFRACTION; MATERIAL COATING; MEASUREMENT; NANOENGINEERING; NANOFABRICATION; PHASE TRANSITION; PRIORITY JOURNAL; QUANTUM MECHANICS; STRESS STRAIN RELATIONSHIP; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; THICKNESS;

EID: 34250202879     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/26/265701     Document Type: Article

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