Growth of self-assembled (Zn)CdSe nanostructures on ZnSe by migration enhanced epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1222-1225

  Leonardi, K ^a   Hommel, D ^a   Meyne, C ^b   Zettler, J T ^b   W richter, ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPOSITION EFFECTS; CRYSTAL LATTICES; DAMPING; DEPOSITION; NANOSTRUCTURED MATERIALS; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

CRITICAL THICKNESS; MIGRATION ENHANCED EPITAXY; REFLECTION ANISOTROPY SPECTROSCOPY (RAS);

EPITAXIAL GROWTH;

EID: 0032688661     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00027-5     Document Type: Article

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