Memory devices obtained by Si+ irradiation through poly-Si/SiO2 gate stack

Journal of Physics: Conference Series

Volumn 10, Issue 1, 2005, Pages 7-10

  Dimitrakis, P ^a   Normand, P ^a   Vontitseva, E ^b   Stegemann, K H ^b   Heinig, K H ^c   Schmidt, B ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b Zentrum Mikroelektronik Dresden GmbH   (Germany)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22544454189     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/10/1/002     Document Type: Article

References (11)

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