Structure and optical properties of amorphous SiCX, thin films prepared by co-evaporation of Si and SiO

Materials Science and Engineering: B

Volumn 69-70, Issue , 2000, Pages 484-488

  Rinnert, H ^a   Vergnat, M ^a   Marchai, G ^a  

^a INSTITUT JEAN LAMOUR   (France)

Author keywords

Evaporation; Optical gap; Photoluminescence; Raman spectrometry; Silicon oxide; Thin film

Indexed keywords

AMORPHOUS FILMS; ANNEALING; COMPOSITION EFFECTS; ENERGY GAP; EVAPORATION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THERMAL EFFECTS; THIN FILMS; VACUUM TECHNOLOGY;

ULTRAHIGH VACUUM;

SEMICONDUCTING FILMS;

EID: 0033879030     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00276-7     Document Type: Article

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