GaInNAs/GaAs multiple-quantum well resonant-cavity-enhanced photodetectors at 1.3 μm

Chinese Physics Letters

Volumn 18, Issue 9, 2001, Pages 1249-1251

  Pan, Zhong ^a   Li, Lian He ^a   Xu, Ying Qiang ^a   Zhang, Wei ^a   Lin, Yao Wang ^a   Zhang, Rui Kang ^b   Zhong, Yuan ^b   Ren, Xiao Min ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; GALLIUM ALLOYS; GALLIUM NITRIDE; INCIDENT LIGHT; MOLECULAR BEAM EPITAXY; NITROGEN PLASMA; PHOTONS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

1.3 ΜM; DC PLASMA; EXCITON PEAK; FULL WIDTHS AT HALF MAXIMUMS; GAAS MULTIPLE QUANTUM WELLS; LONG-WAVELENGTH ABSORPTION; MOLECULAR-BEAM EPITAXY; NITROGEN SOURCES; PLASMA CELLS; RESONANT CAVITY ENHANCED PHOTODETECTORS;

PHOTODETECTORS;

EID: 0035641835     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/9/330     Document Type: Article

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