Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 193-197

  Manfredotti, C ^a   Fizzotti, F ^a   Lo Giudice, A ^a   Jaksic, M ^b   Pastuovic, Z ^b   Paolini, C ^a   Olivero, P ^a   Vittone, E ^a  

^a UNIVERSITY OF TURIN   (Italy)

^b RUDER BO KOVI INSTITUTE   (Croatia)

Author keywords

Carrier lifetime; Ion beam induced charge collection; Silicon device characterisation

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; SEMICONDUCTOR DEVICES; TRANSPORT PROPERTIES;

MINORITY CARRIERS;

ION BEAMS;

EID: 0042932701     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00656-6     Document Type: Conference Paper

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