Measurements of charge collection profiles in virgin and strongly irradiated silicon diodes by means of the micro-IBICC technique

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 476, Issue 3, 2002, Pages 607-613

  Vittone, E ^a   Manfredotti, C ^a   Fizzotti, F ^a   Lo Giudice, A ^a   Lorenzi, A ^a   Galassini, S ^b   Jaksic, M ^c  

^a UNIVERSITY OF TURIN   (Italy)

^b UNIVERSITY OF VERONA   (Italy)

^c RUDER BO KOVI INSTITUTE   (Croatia)

Author keywords

Electronic properties; Ion beam induced charge; Radiation damage; Semiconductors

Indexed keywords

CARRIER MOBILITY; DIFFUSION IN SOLIDS; ELECTRON TRANSPORT PROPERTIES; ION BEAMS; ION BOMBARDMENT; NUMERICAL ANALYSIS; RADIATION DAMAGE; SEMICONDUCTING SILICON;

CHARGE COLLECTION PROFILES (CCP); ION BEAM-INDUCED CHARGE COLLECTION (IBICC) METHOD;

SEMICONDUCTOR DIODES;

EID: 0037059421     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01648-5     Document Type: Conference Paper

References (11)