Experimental investigation of optimum gate workfunction for CMOS four-terminal multigate MOSFETs (MUGFETs)

IEEE Transactions on Electron Devices

Volumn 54, Issue 6, 2007, Pages 1431-1437

  Masahara, Meishoku ^a   Surdeanu, Radu ^b   Witters, Liesbeth ^a   Doornbos, Gerben ^b   Nguyen, Viet H ^b   Van den bosch, Geert ^a   Vrancken, Christa ^a   Jurczak, Malgorzata ^a   Biesemans, Serge ^a  

^a IMEC   (Belgium)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Four terminal (4T) MUGFET; Gate workfunction (GWF); High ; Metal gate; Multigate MOSFET (MUGFET); Subthreshold slope; Threshold voltage control

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); THRESHOLD VOLTAGE;

GATE WORKFUNCTION; METAL GATE; SUBTHRESHOLD SLOPE;

MOSFET DEVICES;

EID: 34249907557     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.896324     Document Type: Article

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