Studies of charge collection mechanisms in SOI devices using a heavy-ion microbeam

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 158, Issue 1, 1999, Pages 260-263

  Hirao, Toshio ^a   Hamano, Tsuyoshi ^b   Sakai, Takuro ^a   Nashiyama, Isamu ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; HEAVY IONS; ION BEAMS; SEMICONDUCTOR DEVICE TESTING; SILICON ON INSULATOR TECHNOLOGY;

MICROBEAMS;

SEMICONDUCTOR JUNCTIONS;

EID: 0033354455     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00505-4     Document Type: Article

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