Study of single-event current pulses induced in SOI diodes by collimated swift heavy-ions micro-beams

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 457-461

  Hirao, Toshio ^a   Mori, Hidenobu ^b   Laird, Jamie Stuart ^a   Onoda, Shinobu ^b   Abe, Hiroshi ^a   Wakasa, Takeshi ^b   Itoh, Hisayoshi ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

Azimuthally varying field cyclotron; Collected charge; Silicon on insulator diode; Single event

Indexed keywords

CHARGE CARRIERS; CYCLOTRONS; HEAVY IONS; ION BEAMS; RADIATION HARDENING; SEMICONDUCTOR JUNCTIONS;

SINGLE-EVENT PHENOMENON (SEP);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0037737600     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00793-6     Document Type: Conference Paper

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