Characterization of Undoped and Nitrogen-Doped 4H-SiC Thin Films by CVD from Bis(trimethylsilylmethane) Precursor

Journal of the Electrochemical Society

Volumn 151, Issue 4, 2004, Pages

  Jeong, Jae Kyeong ^a   Song, Ho Keun ^a   Um, Myung Yoon ^a   Na, Hoon Joo ^a   Song, In Bok ^a   Kim, Dae Hwan ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); EPITAXIAL GROWTH; METHANE; NITROGEN COMPOUNDS; OHMIC CONTACTS; PARTIAL PRESSURE; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SUBSTRATES; SURFACE ROUGHNESS; THERMAL CONDUCTIVITY;

ELECTRON DRIFT VELOCITIES; IMPURITY-INDUCED MACROSTEP BUNCHING; MECHANICAL POLISHING; SEMICONDUCTOR TRANSISTORS;

THIN FILMS;

EID: 2042514331     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1650839     Document Type: Article

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