DX -like centers in InAsGaAs QDIPs observed by polarization-dependent Fourier transform infrared spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 1108-1112

  Zhao, Z Y ^a   Yi, C ^a   Stiff Roberts, A D ^a   Hoffman, A J ^b   Wasserman, D ^b   Gmachl, C ^b  

^a Duke University   (United States)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DARK CURRENTS; DOPING (ADDITIVES); ELECTROMAGNETIC WAVE POLARIZATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

FOURIER TRANSFORM INFRARED ABSORBANCE SPECTROSCOPY; INTRABAND ABSORPTION; QUANTUM DOT INFRARED PHOTODETECTORS (QDIP); SPECTRAL RESPONSE;

PHOTODETECTORS;

EID: 34249889964     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2484803     Document Type: Article

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