The influence of contact composition, pretreatment, and annealing gas on the ohmic behavior of Ti/Al-based ohmic contacts to n-A10.4Ga 0.6N

Materials Research Society Symposium Proceedings

Volumn 680, Issue , 2001, Pages 178-183

  Schweitz, K O ^a   Pribicko, T G ^a   Mohney, S E ^a   Isaacs Smith, T F ^b   Williams, J ^b   Pophristic, M ^c   Gotthold, D ^c   Birkhahn, R ^c   Ferguson, I ^c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ANNEALING; CONTACT RESISTANCE; CURRENT VOLTAGE CHARACTERISTICS; OHMIC CONTACTS; THERMAL EFFECTS; X RAY DIFFRACTION;

ANNEALING GAS; CONTACT COMPOSITION; OHMIC BEHAVIOR; PRETREATMENT;

GALLIUM NITRIDE;

EID: 34249876613     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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