High resolution X-ray photoelectron spectroscopy study on Si 3N4/Si interface structures and its correlation with hysteresis in C-V curves

ECS Transactions

Volumn 1, Issue 1, 2006, Pages 267-276

  Higuchi, M ^a   Teramoto, A ^a   Komura, M ^a   Shinagawa, S ^b   Ikenaga, E ^c   Nohira, H ^b   Kobayashi, K ^c   Hattori, T ^a,b   Sugawa, S ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c JASRI SPring 8   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HYSTERESIS; MICROWAVES; X RAY PHOTOELECTRON SPECTROSCOPY;

C-V CURVES; HIGH DENSITY PLASMAS; SUB-NITRIDES;

SILICON;

EID: 32844463577     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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