Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 65-67

  Cheng, Weitao ^a   Teramoto, Akinobu ^a   Gaubert, Philippe ^a   Hirayama, Masaki ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

FLICKER NOISE; INVERSION MODE;

SPURIOUS SIGNAL NOISE;

EID: 34547382376     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306078     Document Type: Conference Paper

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3. S. Takagi, A. Toriumi, M. Iwase and H. Tango, IEEE Trans. Electron Devices., Vol. 41, No. 12, p. 2357 (1994)
4. L. K. J. Vandamme, IEEE Trans. Electron Devices., Vol.36, No.5, p. 987 (1989)