Sub-1-V supply self-adaptive CMOS image sensor cell with 86-dB dynamic range

IEEE Electron Device Letters

Volumn 28, Issue 6, 2007, Pages 492-494

  Lee, Sungsik ^a,b   Yang, Kyounghoon ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Adaptive sensitivity; CMOS active pixel sensor (CAPS); High dynamic range; Low supply voltage

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; MOS DEVICES; PIXELS; SEMICONDUCTOR DEVICE STRUCTURES; SENSITIVITY ANALYSIS;

ADAPTIVE SENSITIVITY; CMOS ACTIVE PIXEL SENSOR (CAPS); HIGH DYNAMIC RANGE; LOW SUPPLY VOLTAGE;

IMAGE SENSORS;

EID: 34249807000     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.896885     Document Type: Article

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