CMOS image sensors comprised of floating diffusion driving pixels with buried photodiode

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 12, 2004, Pages 2408-2416

  Mabuchi, Keiji ^a   Nakamura, Nobuo ^a   Funatsu, Eiichi ^a   Abe, Takashi ^a   Umeda, Tomoyuki ^a   Hoshino, Tetsuro ^a   Suzuki, Ryoji ^a   Sumi, Hirofumi ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Buried photodiode; CMOS image sensor; Floating diffusion driving; Hole accumulation diode; Pixel boost method

Indexed keywords

CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; CORRELATION METHODS; DIFFUSION; ELECTRIC POTENTIAL; JUNCTION GATE FIELD EFFECT TRANSISTORS; OPTICAL RESOLVING POWER; PHOTODIODES; SAMPLING;

BURIED PHOTODIODES; CMOS IMAGE SENSORS; FLOATING DIFFUSION (FD) DRIVING; HOLE ACCUMULATION DIODES (HAD); PIXEL BOOST METHOD;

IMAGE SENSORS;

EID: 10444267264     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.837085     Document Type: Conference Paper

References (11)

1. E. R. Fossum, "Active pixel sensors: are CCD's dinosaurs?"SPIE, vol. 1900, pp. 2-14, July 1993.
2. _, "CMOS image sensors: electronic camera on a chip," in IEDM Tech. Dig., Dec. 1995, pp. 17-25.
3. N. Teranishi, A. Kohono, Y. Ishihara, E. Oda, and K. Arai, "No image lag photodiode structure in the interline CCD image sensor," in IEDM Tech. Dig., Dec. 1982, pp. 324-327.
4. B. C. Burkey, W. C. Chang, J. Littlehale, T. H. Lee, T. J. Tredwell, and J. P. Lavine et al., "The pinned photodiode for an interline-transfer CCD image sensor," in IEDM Tech. Dig., Dec. 1982, pp. 28-31.
5. M. Hamasaki, T. Suzuki, Y. Kagawa, K. Ishikawa, K. Miyata, and H. Kambe, "An IT-CCD imaging sensor with electronically variable shutter speed, " ITEJ Tech. Rep., vol. 12, no. 12, pp. 31-36, Feb. 1988.
6. R. M. Guidash, T. H. Lee, P. P. K. Lee, D. H. Sackett, C. I. Drowley, and M. S. Swenson et al., "A 0.6 μm CMOS pinned photodiode color imager technology," in IEDM Tech. Dig., Dec. 1997, pp. 927-929.
7. M. S. Inoue, H. Nozaki, H. Yamashita, T. Yamaguchi, H. Ishiwata, and H. Ihara et al., "New LV-BPD (low voltage buried photo-diode) for CMOS imager," in IEDM Tech. Dig., Dec. 1999, pp. 883-886.
8. K. Yonemoto and H. Sumi, "A CMOS image sensor with a simple fixed-pattern-noise-reduction technology and a hole accumulated diode," IEEE J. Solid-State Circuits, vol. 35, pp. 2038-2043, Dec. 2000.
9. T. Ishida, T. Isogai, T. Yoneyama, M. Juen, and T. Kazama, "A 1.6 Mpixel BCAST image sensor," ITE Tech. Rep., vol. 20, no. 23, pp. 37-42, Mar. 1996.
10. S. Kawahito, M. Sakakibara, D. Handoko, N. Nakamura, H. Satoh, and M. Higashi et al., "A column-based pixel-gain-adaptive CMOS image sensor for low-light-level imaging," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2003, pp. 224-225.
11. O. Yadid-Pecht and E. Fossum, "Image sensor with ultra-high-linear-dynamic range utilizing dual output CMOS active pixel sensors." IEEE Trans. Electron Devices, Special Issue on Solid State Image Sensors, vol. 44, pp. 1721-1724, Oct. 1997.