Device technologies for high quality and smaller pixel in CCD and CMOS image sensors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 989-992

  Abe, Hideshi ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; CROSSTALK; ELECTRIC FIELDS; IMAGE SENSORS; IMPURITIES; MICROLENSES; PHOTODIODES; DIGITAL CAMERAS; PIXELS;

CELLULAR PHONES; CMOS SENSORS; CORRELATED DOUBLE SAMPLING (CDS); TRANSFER GATE (TG);

IMAGING SYSTEMS; MICROLENSES;

CCD IMAGE SENSORS; CMOS IMAGE SENSOR; DESIGN ARCHITECTURE; DEVICE TECHNOLOGIES; GAIN SATURATION; HIGH QUALITY; IMAGING DEVICE; MEGAPIXELS; ON CHIPS; PROCESS ARCHITECTURE;

EID: 21644452057     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. E.R. Fossum, "Active Pixel Sensors: Are CCD's Dinosaurs?", Proc. SPIE, Vol. 1900, p2-14, 1993.
2. R.Merrill, "Color Separation in an Active Pixel Cell Imaging Array Using a Triple-Well Structure", U.S. Patent 5,965,875, 1999.
3. H. Takahashi, M. Kinoshita, K. Morita, T. Shirai, T. Sato, T. Kimura, H. Yuzurihara, S. Inoue, "A 3.9 μm Pixel Pitch VGA Format 10b Digital Image Sensor with1.5-Transistor/Pixel", ISSCC Digest of Technical Papers, Vol.47, p 108-109, February 2004.
4. M. Mori, M. Katsuno, S. Kasuga, T. Murata, T. Yamaguchi, "A l/4in 2M Pixel CMOS Image Sensor with 1.75Transistor/Pixel", ISSCC Digest of Technical Papers, Vol. 47, p 110-111, February 2004.
5. K. Mabuchi, N. Nakamura, E. Funatsu, T. Abe, T. Umeda, T. Hoshino, R. Suzuki, H. Sumi, "CMOS Image Sensor Using a Floating Diffusion Driving Buried Photodiode", ISSCC Digest ofTechnical Papers, Vol. 47, p 112-113, February 2004.