An ultra-low dark current CMOS image sensor cell using n+ ring reset

IEEE Electron Device Letters

Volumn 23, Issue 9, 2002, Pages 538-540

  Cheng, Hsiu Yu ^a   King, Ya Chin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

CMOS image sensor; Dark current; Fill factor; n+ ring reset

Indexed keywords

CMOS INTEGRATED CIRCUITS; ETCHING; FABRICATION; INTEGRATED CIRCUIT LAYOUT; PHOTONS;

ACTIVE PIXEL SENSORS (APS);

IMAGE SENSORS;

EID: 0036714041     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.802587     Document Type: Article

References (8)

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6. A CMOS image sensor with a simple FPN-reduction technology and a hole accumulated diode
7. Accurate extraction of reverse leakage current components of shallowsilicided p+-n junction for quarter and subquarter-micron MOSFETs
8. A high performance active pixel sensor with 0.18 μm CMOS color image technology