Nitride-based green light-emitting diodes with various p-type layers

IEEE/OSA Journal of Display Technology

Volumn 3, Issue 2, 2007, Pages 126-132

  Lee, Wonseok ^b   Limb, Jae ^b   Ryou, Jae Hyun ^a,b   Yoo, Dongwon ^b   Ewing, Mark Andrew ^b   Korenblit, Yair ^b   Dupuis, Russell D ^a,b  

^a IEEE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Doping; Electroluminescence; III nitrides; Light emitting diodes (LEDs); Piezoelectricity

Indexed keywords

HOLE TRANSPORT; POTENTIAL BARRIER; QUANTUM WELL BARRIER;

DOPING (ADDITIVES); ELECTROLUMINESCENCE; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PIEZOELECTRICITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 34249333114     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2007.896719     Document Type: Article

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