Effect of compressive strain relaxation in GaN blue light-emitting diodes with variation of n + -GaN thickness on its device performance

Applied Physics Letters

Volumn 87, Issue 1, 2005, Pages

  Kim, Chi Sun ^a   Kim, Hyung Gu ^a   Hong, Chang Hee ^a   Cho, Hyung Koun ^b  

^a Chonbuk National University   (South Korea)

^b Dong A University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; COMPRESSIVE STRAIN RELAXATION;

COMPRESSIVE STRENGTH; LIGHT EMITTING DIODES; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THICKNESS MEASUREMENT;

GALLIUM NITRIDE;

EID: 24144499978     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1938254     Document Type: Article

References (15)

1. W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 68, 970 (1996).
2. A. Shikanai, T. Azuhata, T. Sotab, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura, J. Appl. Phys. 81, 417 (1997).
3. I.-H. Lee, I.-H Choi, C. R. Lee, and S. K. Noh, Appl. Phys. Lett. 71, 1359 (1997).
4. L. T. Romano, B. S. Krusor, M. D. McCluskey, D. P. Bour, and K. Nauka, Appl. Phys. Lett. 73, 1757 (1998).
5. H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, Appl. Phys. Lett. 79, 215 (2001).
6. X. Guo and E. F. Schubert, J. Appl. Phys. 90, 4191 (2001).
7. M. G. Cheong, R. J. Choi, E.-K. Suh, and H. J. Lee, Appl. Phys. Lett. 82, 625 (2003).
8. Y. Sun, Y.-H. Cho, E.-K. Suh, H. J. Lee, R. J. Choi, and Y. B. Hahn, Appl. Phys. Lett. 84, 49 (2004).
9. X. H. Wu, L. M. Brown, D. Kapolnek, B. Keller, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 80, 3228 (1996).
10. W. Gotz, L. T. Romano, J. Walker, N. M. Johnson, and R. J. Molnar, Appl. Phys. Lett. 72, 1214 (1998).
11. H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. J. Humphreys, J. Cryst. Growth 231, 28 (2001).
12. Y.-H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 73, 1370 (1998).
13. S. Y. Karpov, MRS Internet J. Nitride Semicond. Res. 3, 16 (1999).
14. A. Tabata, L. K. Teles, L. M. R. Scolfaro, L. R. Leite, A. Kharchenko, T. Frey, D. J. As, D. Schikora, K. Lischika, J. Furthmuller, and F. Bechstedt, Appl. Phys. Lett. 80, 769 (2002).
15. S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeeira, N. Franco, I. M. Watson, and C. J. Deatcher, Appl. Phys. Lett. 80, 3913 (2002).