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Chinese Physics Letters

Volumn 24, Issue 5, 2007, Pages 1365-1367

Strain effect on photoluminescences from InGaN MQWs with different earriers grown by MOCVD

(7) Yu, Tong Jun a Kang, Xiang Ning b Pan, Yao Bo b Qin, Zhi Xin b Chen, Zhi Zhong b Yang, Zhi Jian b Zhang, Guo Yi b

a PEKING UNIVERSITY (China)

b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ELECTRIC FIELDS; INDIUM ALLOYS; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SAPPHIRE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

BLUE SHIFT; INGAN/GAN MQWS; LASER LIFT-OFF TECHNOLOGIES; MEMBRANE SAMPLES; PEAK POSITION; RAMAN SCATTERING SPECTRA; RED SHIFT; SAPPHIRE SUBSTRATES; STRAIN EFFECT; XRD;

III-V SEMICONDUCTORS;

EID: 34249303109 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/24/5/066 Document Type: Article

Times cited : (3)

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