Epitaxial growth and time-resolved photoluminescence studies of AlN Epilayers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4992, Issue , 2003, Pages 202-208

  Nam, K B ^a   Li, J ^a   Nakarmi, M L ^a   Lin, J Y ^a   Jiang, H X ^a  

^a KANSAS STATE UNIVERSITY   (United States)

Author keywords

A1N; Excitons; Time Resolved Photoluminescence; UV light emitters; Wide Bandgap Semiconductors

Indexed keywords

ALUMINUM NITRIDE; BINDING ENERGY; EPILAYERS; EXCITONS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; ULTRAFAST PHENOMENA;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); NON-RADIATIVE RECOMBINATION CHANNELS; RECOMBINATION LIFETIME; SAPPHIRE SUBSTRATES; TEMPERATURE DEPENDENCIES; TIME-RESOLVED PHOTOLUMINESCENCE; TIME-RESOLVED PL MEASUREMENT; UV LIGHT EMITTERS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 33645697537     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.479274     Document Type: Conference Paper

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