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Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 562-565

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

(6) Saripalli, Y N a Zeng, C a Long, J P b Barlage, D W a Johnson, M A L a Braddock, D c

a North Carolina State University (United States)

b NORTH CAROLINA STATE UNIVERSITY (United States)

c OSEMI Inc (United States)

Author keywords

A1. Ohmic contacts; A3. MOVPE; A3. Selected area re growth; B1. GaN; B3. MOSFET

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MOSFET DEVICES; OHMIC CONTACTS; SEMICONDUCTOR MATERIALS; SUBSTRATES;

FREE-CARRIER DENSITY; GAN; SELECTED AREA RE-GROWTH; SOURCE DRAIN REGIONS;

EPITAXIAL GROWTH;

EID: 30444433400 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.075 Document Type: Conference Paper

Times cited : (5)

References (11)

1
- 0031250249
- A. Khan, Q. Chen, M.S. Shur, B.T. Dermott, J.A. Higgins, J. Burm, W.J. Schaff, and L.F. Eastman Solid-State Electron. 41 1997 1555
- (1997) Solid-State Electron. , vol.41 , pp. 1555
- Khan, A.¹ Chen, Q.² Shur, M.S.³ Dermott, B.T.⁴ Higgins, J.A.⁵ Burm, J.⁶ Schaff, W.J.⁷ Eastman, L.F.⁸

2
- 0034318865
- S.J. Pearton, and F. Ren Adv. Mater. 12 21 2000 1571
- (2000) Adv. Mater. , vol.12 , Issue.21 , pp. 1571
- Pearton, S.J.¹ Ren, F.²

3
- 14344275374
- M. Shur, R. Gaska, and A. Khan Mater. Sci. Forum 353-356 2001 807
- (2001) Mater. Sci. Forum , vol.353-356 , pp. 807
- Shur, M.¹ Gaska, R.² Khan, A.³

4
- 30444446345
- Y.N. Saripalli, X.-Q. Liu, D.W. Barlage, M.A.L. Johnson, D. Braddock, N.A. Stoddard, and A. Chugh MRS Proceedings, Fall meeting, Symposium E: GaN and Related Alloys 2004
- (2004) MRS Proceedings, Fall Meeting, Symposium E: GaN and Related Alloys
- Saripalli, Y.N.¹ Liu, X.-Q.² Barlage, D.W.³ Johnson, M.A.L.⁴ Braddock, D.⁵ Stoddard, N.A.⁶ Chugh, A.⁷

5
- 0000703524
- T. Zheleva, S.A. Smith, D.B. Thomson, T. Gehrke, K. Linthicum, P. Rajagopal, E. Carlson, W.M. Ashmawi, and R.F. Davis MRS Internet J. Nitride Semicond. Res. 4S1 1999 G3.38
- (1999) MRS Internet J. Nitride Semicond. Res. , vol.41
- Zheleva, T.¹ Smith, S.A.² Thomson, D.B.³ Gehrke, T.⁴ Linthicum, K.⁵ Rajagopal, P.⁶ Carlson, E.⁷ Ashmawi, W.M.⁸ Davis, R.F.⁹

6
- 0000965957
- Z.R. Zytkiewicz Cryst. Res. Technol. 34 5-6 1999 573
- (1999) Cryst. Res. Technol. , vol.34 , Issue.5-6 , pp. 573
- Zytkiewicz, Z.R.¹

7
- 0035148032
- C.C. Mithcell, M.E. Coltrin, and J. Huan J. Crystal Growth 222 2001 144
- (2001) J. Crystal Growth , vol.222 , pp. 144
- Mithcell, C.C.¹ Coltrin, M.E.² Huan, J.³

8
- 0023040588
- H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda Appl. Phys. Lett. 48 5 1986 353
- (1986) Appl. Phys. Lett. , vol.48 , Issue.5 , pp. 353
- Amano, H.¹ Sawaki, N.² Akasaki, I.³ Toyoda, Y.⁴

9
- 0026244249
- S. Nakamura Jpn. J. Appl. Phys 30 1991 L1705
- (1991) Jpn. J. Appl. Phys , vol.30
- Nakamura, S.¹

10
- 0032688630
- J. Suda, T. Kurobe, and H. Matsunami J. Crystal Growth 201/202 1999 437
- (1999) J. Crystal Growth , vol.201-202 , pp. 437
- Suda, J.¹ Kurobe, T.² Matsunami, H.³

11
- 30444446946
- L. He, X. Gu, J. Xie, F. Yun, A.A. Baski, and H. Morkoc MRS Symp. Proc. 798 2004 Y10.64.1
- (2004) MRS Symp. Proc. , vol.798
- He, L.¹ Gu, X.² Xie, J.³ Yun, F.⁴ Baski, A.A.⁵ Morkoc, H.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.