Monte Carlo simulations of InGaAs nano-MOSFETs

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2150-2153

  Kalna, K ^a   Droopad, R ^b   Passlack, M ^b   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

doped heterostructure; High ; III V MOSFETs; Monte Carlo simulations

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; MONTE CARLO METHODS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

Δ-DOPED HETEROSTRUCTURE; HIGH-Κ; III-V MOSFETS;

MOSFET DEVICES;

EID: 34249064300     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.011     Document Type: Article

References (11)

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