The use of cathodoluminescence during molecular beam epitaxy growth of gallium nitride to determine substrate temperature

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 431-435

  Lee, K ^a   Myers, T H ^a  

^a WEST VIRGINIA UNIVERSITY   (United States)

Author keywords

Cathodoluminescence (CL); Electron beam irradiation; Gallium nitride (GaN); Molecular beam epitaxy (MBE)

Indexed keywords

PEAK ENERGY; SUBSTRATE TEMPERATURE; TEMPERATURE DRIFT;

ELECTRON IRRADIATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY;

CATHODOLUMINESCENCE;

EID: 34249031314     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0045-9     Document Type: Conference Paper

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