SCOPUS 정보 검색 플랫폼

Volumn , Issue 7, 2003, Pages 2248-2252

Effects of Mg fluctuation on the electrical and optical properties in p-GaN/undoped GaN layers dependent on the growth temperature

(5) Kim, C S a Cho, H K a Hong, C H a Suh, E K a Lee, H J a

a Chonbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; ELECTRICAL AND OPTICAL PROPERTIES; GAN SURFACES; HIGH GROWTH TEMPERATURES; MG CONCENTRATIONS; PL EMISSION; SECONDARY ION MASS SPECTROSCOPIES (SIMS); TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; GROWTH TEMPERATURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

ELECTRIC PROPERTIES;

EID: 33747263485 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200303413 Document Type: Conference Paper

Times cited : (3)

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