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Volumn 33, Issue 5, 2004, Pages 445-449

Mg fluctuation in p-GaN layers and its effects on inGaN/GaN blue light-emitting diodes dependent on p-GaN growth temperature

(5) Kim, C S a Cho, H K a,b Yoo, M K a Cheong, H S a Hong, C H a

a Chonbuk National University (South Korea)

b Dong A University (South Korea)

Author keywords

Light emitting diode; Mg fluctuation; P GaN

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTALS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS;

INVERSION DOMAIN BOUNDARIES (IDB); MG FLUCTUATIONS; P-GAN;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2442464918 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-004-0200-0 Document Type: Conference Paper

Times cited : (2)

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