Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1731-1735

  Hayama, K ^a   Takakura, K ^a   Shigaki, K ^a   Ohyama, H ^a   Rafi J M ^b   Mercha, A ^c   Simoen, E ^c   Claeys, C ^c,d  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC PROPERTIES; ELECTRON DEVICES; ELECTRON IRRADIATION; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

BACK GATE VOLTAGE; DEPLETATION; PARASITIC EDGE TRANSISTOR; SIDEWALL LEAKAGE;

GATES (TRANSISTOR);

EID: 33747785901     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.063     Document Type: Article

References (11)

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3. Mercha A., Rafí J.M., Simoen E., Augendre A., and Claeys C. "Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs. IEEE Trans. Electron Devices 50 (2003) 1675-1682
4. Mayer D.C. Modes of operation and radiation sensitivity of ultrathin SOI transistors. IEEE Trans. Electron Devices 37 (1990) 1280-1288
5. Hayama K., Takakura K., Ohyama H., Rafí J.M., Mercha A., Simoen E., et al. Impact of 7.5-MeV Proton Irradiation on Front-Back Gate Coupling Effect in Ultra Thin Gate Oxide FD-SOI n-MOSFETs. IEEE Trans. Nucl. Sci. 51 (2004) 3795-3800
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