Growth mode induced carrier localization in InGaN/GaN quantum wells

Philosophical Magazine

Volumn 87, Issue 13, 2007, Pages 2067-2075

  Grandjean, N ^a   Feltin, E ^a   Butte R ^a   Carlin, J F ^a   Sonderegger, S ^a   Deveaud, B ^a   Ganiere J D ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE MORPHOLOGY;

DISLOCATION TERMINATIONS; ENERGY TRANSITIONS; TIME-RESOLVED CATHODOLUMINESCENCE (TRCL);

SEMICONDUCTOR QUANTUM WELLS;

EID: 34248579104     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430701271942     Document Type: Article

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