Nanocrystalline silicon thin-film transistors with 50-nm-thick deposited channel layer, 10 cm2V-1s-1 electron mobility and 108 on/off current ratio

Applied Physics A: Materials Science and Processing

Volumn 74, Issue 4, 2002, Pages 541-543

  Min, R B ^a   Wagner, S ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON MOBILITY; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; SILICON;

NANOCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0036534420     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100927     Document Type: Article

References (9)

1. High electron mobility TFTs of nanocrystalline silicon deposited at 150 °C on plastic foil