An analytical CAD kink effect model of partially-depleted SOI NMOS devices operating in strong inversion

Solid-State Electronics

Volumn 41, Issue 3, 1997, Pages 447-458

  Chen, S S ^a   Kuo, J B ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THIN FILM DEVICES;

KINK EFFECT;

MOS DEVICES;

EID: 0031097098     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00176-1     Document Type: Article

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